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Ultra-shallow junction formation in SOI using vacancy engineering

Gwilliam, RM, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2006) Ultra-shallow junction formation in SOI using vacancy engineering Physics of Ionized Gases, 876. pp. 181-190.

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Abstract

Forming highly conducting, ultra-shallow boron doped layers, is well known to be a challenge for future CMOS devices. This paper reviews a technique known as vacancy engineering, which is a co-implant process that has been proven to be efficient in reducing anomalous effects, such as transient enhanced diffusion and dopant clustering. Due to relatively low improvement factors, vacancy engineering has never been implemented as an industrial process. However, recent advancements demonstrate that by optimizing the implant substrate and anneal parameters it is possible to produce low resistive, p-type layers with a high degree of thermal stability which rival the more preferred techniques used today.

Item Type: Article
Authors :
NameEmailORCID
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Colombeau, BUNSPECIFIEDUNSPECIFIED
Sealy, BUNSPECIFIEDUNSPECIFIED
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Date : 2006
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDHadzievski, LUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDMarinkovic, BPUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDSimonovic, NSUNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : vacancy engineering, SOI, source/drain extensions, boron, TRANSIENT ENHANCED DIFFUSION, BORON-INTERSTITIAL CLUSTERS, ION-IMPLANTATION, SILICON, SI, TEMPERATURE, REDUCTION, DAMAGE, AMORPHIZATION, ACTIVATION
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830499

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