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Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

Smith, AJ, Cowern, NEB, Colombeau, B, Gwilliam, R, Sealy, BJ, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants Ion Implantation Technology, 866. pp. 84-87.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Colombeau, BUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Barozzi, MUNSPECIFIEDUNSPECIFIED
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDKirkby, KJUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDChivers, DUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDGwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
UNSPECIFIEDSmith, Aa.j.smith@surrey.ac.ukUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, Condensed Matter, Physics, vacancy engineering, junction stability, boron, SOI, TRANSIENT DIFFUSION, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830497

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