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Enhanced antimony activation for ultra-shallow junctions in strained silicon

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Bennett, NSUNSPECIFIEDUNSPECIFIED
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Beer, CSUNSPECIFIEDUNSPECIFIED
O'Reilly, LUNSPECIFIEDUNSPECIFIED
Colombeau, BUNSPECIFIEDUNSPECIFIED
Dilliway, GDUNSPECIFIEDUNSPECIFIED
Harper, RUNSPECIFIEDUNSPECIFIED
McNally, PJUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDPawlak, BJUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDJones, KSUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDFelch, SBUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDHane, MUNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830492

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