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Enhanced antimony activation for ultra-shallow junctions in strained silicon

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Bennett, NS
Smith, AJa.j.smith@surrey.ac.uk
Beer, CS
O'Reilly, L
Colombeau, B
Dilliway, GD
Harper, R
McNally, PJ
Gwilliam, Rr.gwilliam@surrey.ac.uk
Cowern, NEB
Sealy, BJ
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
Pawlak, BJ
Jones, KS
Felch, SB
Hane, M
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830492

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