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Erbium-doped silicon and porous silicon for optoelectronics

Reed, GT and Kewell, AK (1996) Erbium-doped silicon and porous silicon for optoelectronics MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 40 (2-3). pp. 207-215.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Reed, GTg.reed@surrey.ac.ukUNSPECIFIED
Kewell, AKUNSPECIFIEDUNSPECIFIED
Date : 1 September 1996
Identification Number : https://doi.org/10.1016/0921-5107(96)01657-1
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, MOLECULAR-BEAM EPITAXY, ROOM-TEMPERATURE LUMINESCENCE, OPTICAL-PHASE MODULATOR, OXYNITRIDE WAVE-GUIDES, 1.54-MU-M LUMINESCENCE, EXCITATION MECHANISMS, MODE CHARACTERISTICS, LOCAL-STRUCTURE, CRYSTALLINE SI, SIMOX MATERIAL
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:12
Last Modified : 17 May 2017 11:12
URI: http://epubs.surrey.ac.uk/id/eprint/830456

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