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High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

Gardes, FY, Brimont, A, Sanchis, P, Rasigade, G, Marris-Morini, D, O'Faolain, L, Dong, F, Fedeli, JM, Dumon, P, Vivien, L, Krauss, TF, Reed, GT and Marti, J (2009) High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode OPT EXPRESS, 17 (24). pp. 21986-21991.

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Abstract

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications. (C) 2009 Optical Society of America

Item Type: Article
Authors :
NameEmailORCID
Gardes, FYf.gardes@surrey.ac.ukUNSPECIFIED
Brimont, AUNSPECIFIEDUNSPECIFIED
Sanchis, PUNSPECIFIEDUNSPECIFIED
Rasigade, GUNSPECIFIEDUNSPECIFIED
Marris-Morini, DUNSPECIFIEDUNSPECIFIED
O'Faolain, LUNSPECIFIEDUNSPECIFIED
Dong, FUNSPECIFIEDUNSPECIFIED
Fedeli, JMUNSPECIFIEDUNSPECIFIED
Dumon, PUNSPECIFIEDUNSPECIFIED
Vivien, LUNSPECIFIEDUNSPECIFIED
Krauss, TFUNSPECIFIEDUNSPECIFIED
Reed, GTg.reed@surrey.ac.ukUNSPECIFIED
Marti, JUNSPECIFIEDUNSPECIFIED
Date : 23 November 2009
Identification Number : https://doi.org/10.1364/OE.17.021986
Uncontrolled Keywords : OPTICAL MODULATION, CARRIER-DEPLETION
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:09
Last Modified : 17 May 2017 11:09
URI: http://epubs.surrey.ac.uk/id/eprint/830260

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