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Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations

Steeds, JW, Peng, N and Sullivan, W (2009) Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations In: 7th European Conference on Silicon Carbide and Related Materials, 2008-09-07 - 2008-09-11, Barcelona, SPAIN.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Steeds, JWUNSPECIFIEDUNSPECIFIED
Peng, Nn.peng@surrey.ac.ukUNSPECIFIED
Sullivan, WUNSPECIFIEDUNSPECIFIED
Date : 1 January 2009
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDPerezTomas, AUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDGodignon, PUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDVellvehi, MUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDBrosselard, PUNSPECIFIEDUNSPECIFIED
publisherTRANS TECH PUBLICATIONS LTD, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Ceramics, Materials Science, Multidisciplinary, Engineering, Materials Science, defects, photoluminescence, 4H SiC, helium and proton implantation, PHOTOLUMINESCENCE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:09
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/830211

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