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Enhanced n-type dopant solubility in tensile-strained Si

Bennett, NS, Radamson, HH, Beer, CS, Smith, AJ, Gwilliam, RM, Cowern, NEB and Sealy, BJ (2008) Enhanced n-type dopant solubility in tensile-strained Si THIN SOLID FILMS, 517 (1). pp. 331-333.

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Abstract

The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation. (c) 2008 Elsevier B.V. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Bennett, NSUNSPECIFIEDUNSPECIFIED
Radamson, HHUNSPECIFIEDUNSPECIFIED
Beer, CSUNSPECIFIEDUNSPECIFIED
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 3 November 2008
Identification Number : 10.1016/j.tsf.2008.08.072
Uncontrolled Keywords : Antimony, Arsenic, Hall effect, Stress, Ion Implantation, Solid phase epitaxy, IMPLANTED SILICON, JUNCTIONS, SB
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:08
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/830179

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