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Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si

Gao, Y, Chong, YT, Chow, CF, Wong, SP, Homewood, KP and Li, Q (2007) Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 259 (2). pp. 871-874.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Gao, YUNSPECIFIEDUNSPECIFIED
Chong, YTUNSPECIFIEDUNSPECIFIED
Chow, CFUNSPECIFIEDUNSPECIFIED
Wong, SPUNSPECIFIEDUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Li, QUNSPECIFIEDUNSPECIFIED
Date : 1 June 2007
Identification Number : 10.1016/j.nimb.2007.02.102
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, FeSi2, ion implantation, TEM, photoluminescence, BETA-FESI2 FILMS, MU-M, TEMPERATURE, DEPOSITION, SILICON, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:07
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/830058

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