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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Ishibashi, Y, Kobayashi, T, Prins, AD, Nakahara, J, Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Excitation and pressure effects on photoluminescence from dislocation engineered silicon material In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Ishibashi, YUNSPECIFIEDUNSPECIFIED
Kobayashi, TUNSPECIFIEDUNSPECIFIED
Prins, ADUNSPECIFIEDUNSPECIFIED
Nakahara, JUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Date : 1 January 2007
Identification Number : 10.1002/pssb.200672525
Contributors :
ContributionNameEmailORCID
publisherWILEY-V C H VERLAG GMBH, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, LIGHT-EMITTING-DIODES, TEMPERATURE-DEPENDENCE, HYDROSTATIC-PRESSURE, ROOM-TEMPERATURE, GAP
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:06
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/830026

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