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Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes

Lourenco, MA, Milosavljevic, M, Shao, G, Gwilliam, RM and Homewood, KP (2006) Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials, 2005-07-03 - 2005-07-08, Singapore, SINGAPORE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Milosavljevic, MUNSPECIFIEDUNSPECIFIED
Shao, GUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Date : 10 May 2006
Identification Number : https://doi.org/10.1016/j.tsf.2005.09.036
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, silicon, electroluminescence, dislocation engineered, light emitting devices, ELECTROLUMINESCENCE, DEVICES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:05
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/829969

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