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Low-temperature processing of antimony-implanted silicon

Alzanki, T, Gwilliam, R, Emerson, NG and Sealy, BJ (2004) Low-temperature processing of antimony-implanted silicon JOURNAL OF ELECTRONIC MATERIALS, 33 (7). pp. 767-769.

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Item Type: Article
Authors :
NameEmailORCID
Alzanki, TUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Emerson, NGn.emerson@surrey.ac.ukUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 1 July 2004
Identification Number : https://doi.org/10.1007/s11664-004-0238-z
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Applied, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, differential Hall effect, rapid thermal annealing, antimony, arsenic, shallow junction formation, Sb, As, Si
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:04
Last Modified : 17 May 2017 14:54
URI: http://epubs.surrey.ac.uk/id/eprint/829859

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