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Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Fehse, RUNSPECIFIEDUNSPECIFIED
Jin, SUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Illek, SUNSPECIFIEDUNSPECIFIED
Egorov, AYUNSPECIFIEDUNSPECIFIED
Date : 6 December 2001
Identification Number : https://doi.org/10.1049/el:20011033
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:02
Last Modified : 17 May 2017 14:53
URI: http://epubs.surrey.ac.uk/id/eprint/829737

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