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Improved modulation performance of a silicon p-i-n device by trench isolation

Hewitt, PD and Reed, GT (2001) Improved modulation performance of a silicon p-i-n device by trench isolation JOURNAL OF LIGHTWAVE TECHNOLOGY, 19 (3). pp. 387-390.

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Item Type: Article
Authors :
NameEmailORCID
Hewitt, PDUNSPECIFIEDUNSPECIFIED
Reed, GTg.reed@surrey.ac.ukUNSPECIFIED
Date : 1 March 2001
Identification Number : https://doi.org/10.1109/50.918892
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, OPTICS, TELECOMMUNICATIONS, carrier injection, integrated optics, phase modulators, plasma dispersion effect, silicon-on-insulator (SOI) photonics, WAVE-GUIDES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:01
Last Modified : 17 May 2017 11:01
URI: http://epubs.surrey.ac.uk/id/eprint/829699

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