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Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

Gwilliam, RM, Hutchinson, S, Shannon, JM, Emerson, NG and Sealy, BJ (1998) Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation ELECTRONICS LETTERS, 34 (25). pp. 2441-2442.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Hutchinson, SUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Emerson, NGn.emerson@surrey.ac.ukUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 10 December 1998
Identification Number : https://doi.org/10.1049/el:19981658
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, ION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 10:59
Last Modified : 17 May 2017 14:53
URI: http://epubs.surrey.ac.uk/id/eprint/829591

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