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Depth profile analysis for MgB2 thin films, formed by B implantation in Mg ribbons using energetic ion backscatterings

Peng, N, Jeynes, C, Gwilliam, RM, Kirkby, KJ and Webb, RP (2007) Depth profile analysis for MgB2 thin films, formed by B implantation in Mg ribbons using energetic ion backscatterings In: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors, 2006-07-09 - 2006-07-14, Dresden, GERMANY.

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Abstract

Both Rutherford backscatterings of He-4(+) beams and non-Rutherford backscatterings of He-4(+) and H+ beams have been used in this study to investigate the depth profiles of B dopant in Mg target upon B implantation and post annealing. Primitive data analysis suggests an enhanced diffusion of surface C contaminant during the B implantation process, together with enhanced surface oxidation upon implantation and thermal annealing in flowing N-2 atmosphere. Published by Elsevier B.V.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Peng, Nn.peng@surrey.ac.ukUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Kirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Date : 1 September 2007
Identification Number : https://doi.org/10.1016/j.physc.2007.04.120
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : ion beam synthesis, MgB2, elastic backscattering
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 10:56
Last Modified : 17 May 2017 14:53
URI: http://epubs.surrey.ac.uk/id/eprint/829393

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