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Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sharp, JAUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Foad, MAUNSPECIFIEDUNSPECIFIED
Kirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDKirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
UNSPECIFIEDChivers, DUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDGwilliam, RUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDSmith, AUNSPECIFIEDUNSPECIFIED
publisherAMER INST PHYSICS, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, Condensed Matter, Physics, boron, laser annealing, deactivation, silicon, ULTRA-SHALLOW JUNCTIONS, THERMAL-STABILITY, SILICON, ACTIVATION, REACTIVATION, PROFILES, DOPANTS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 10:56
Last Modified : 17 May 2017 14:53
URI: http://epubs.surrey.ac.uk/id/eprint/829391

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