Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Zhao, M, Karim, A, Ni, W-X, Pidgeon, CR, Phillips, PJ, Carder, D, Murdin, BN, Fromherz, T and Paul, DJ (2006) Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering In: Symposium on Si-based Photonics held at the EMRS 2006 Conference, 2006-05-29 - 2006-06-02, Nice, FRANCE.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Zhao, M UNSPECIFIED UNSPECIFIED Karim, A UNSPECIFIED UNSPECIFIED Ni, W-X UNSPECIFIED UNSPECIFIED Pidgeon, CR UNSPECIFIED UNSPECIFIED Phillips, PJ UNSPECIFIED UNSPECIFIED Carder, D UNSPECIFIED UNSPECIFIED Murdin, BN b.murdin@surrey.ac.uk UNSPECIFIED Fromherz, T UNSPECIFIED UNSPECIFIED Paul, DJ UNSPECIFIED UNSPECIFIED
Date :	1 December 2006
Identification Number :	https://doi.org/10.1016/j.jlumin.2006.08.080
Contributors :	Contribution Name Email ORCID publisher ELSEVIER SCIENCE BV, UNSPECIFIED UNSPECIFIED
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Optics, OPTICS, molecular beam epitaxy (MBE), Si/SiGe, pump-probe spectroscopy, intersubband transition, lifetime, QUANTUM CASCADE STRUCTURES, RELAXATION, LASER
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 10:56
Last Modified :	17 May 2017 14:52
URI:	http://epubs.surrey.ac.uk/id/eprint/829343

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