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An improved modal gain model for semiconductor lasers

Lim, CG, Iezekiel, S and Snowden, CM (2005) An improved modal gain model for semiconductor lasers Proceedings of SPIE - The International Society for Optical Engineering, 5722. pp. 516-522.

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Abstract

The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.

Item Type: Article
Authors :
NameEmailORCID
Lim, CGUNSPECIFIEDUNSPECIFIED
Iezekiel, SUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 22 August 2005
Identification Number : https://doi.org/10.1117/12.590215
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 16 May 2017 12:33
URI: http://epubs.surrey.ac.uk/id/eprint/814362

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