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Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

Rudge, PJ, Miles, RE, Steer, MB and Snowden, CM (2001) Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model IEEE Transactions on Microwave Theory and Techniques, 49 (12). pp. 2315-2321.

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Abstract

The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts fully for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz.

Item Type: Article
Authors :
NameEmailORCID
Rudge, PJUNSPECIFIEDUNSPECIFIED
Miles, REUNSPECIFIEDUNSPECIFIED
Steer, MBUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 1 December 2001
Identification Number : https://doi.org/10.1109/22.971615
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 16 May 2017 12:33
URI: http://epubs.surrey.ac.uk/id/eprint/814359

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