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Breakdown characterisation of HEMTs and MESFETs based on a new thermally driven gate model

Albasha, L, Snowden, CM and Pollard, RD (1997) Breakdown characterisation of HEMTs and MESFETs based on a new thermally driven gate model In: 1997 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 97), 1997-09-08 - 1997-09-10, CAMBRIDGE, MA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Albasha, LUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Pollard, RDUNSPECIFIEDUNSPECIFIED
Date : 1 January 1997
Identification Number : https://doi.org/10.1109/SISPAD.1997.621391
Contributors :
ContributionNameEmailORCID
publisherI E E E, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 16 May 2017 12:33
URI: http://epubs.surrey.ac.uk/id/eprint/814319

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