2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS
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BARTON, TM and SNOWDEN, CM (1990) 2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS IEEE TRANSACTIONS ON ELECTRON DEVICES, 37 (6). pp. 1409-1415.
Full text not available from this repository.| Item Type: | Article | |||||||||
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| Divisions : | Surrey research (other units) | |||||||||
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| Date : | 1 June 1990 | |||||||||
| DOI : | 10.1109/16.106234 | |||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED | |||||||||
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| Depositing User : | Symplectic Elements | |||||||||
| Date Deposited : | 16 May 2017 12:33 | |||||||||
| Last Modified : | 24 Jan 2020 13:06 | |||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/814313 |
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