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2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

BARTON, TM and SNOWDEN, CM (1990) 2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS IEEE TRANSACTIONS ON ELECTRON DEVICES, 37 (6). pp. 1409-1415.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
BARTON, TMUNSPECIFIEDUNSPECIFIED
SNOWDEN, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 1 June 1990
Identification Number : 10.1109/16.106234
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 16 May 2017 14:04
URI: http://epubs.surrey.ac.uk/id/eprint/814313

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