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A charge-control HEMT model incorporating deep level effects

Singh, R and Snowden, CM (1999) A charge-control HEMT model incorporating deep level effects SOLID-STATE ELECTRONICS, 43 (3). pp. 473-480.

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Item Type: Article
Authors :
NameEmailORCID
Singh, RUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 1 March 1999
Identification Number : 10.1016/S0038-1101(98)00316-5
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, EPITAXIAL GAAS CRYSTALS, DX-CENTER, NUMERICAL-SIMULATION, ALXGA1-XAS, HETEROJUNCTIONS, SUBSTRATE, TRAPS, BULK
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 16 May 2017 12:33
URI: http://epubs.surrey.ac.uk/id/eprint/814303

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