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Recent developments in compound semiconductor microwave power technology

Snowden, CM (2003) Recent developments in compound semiconductor microwave power technology IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 19-22.

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Abstract

This paper addresses the state-of-the-art in microwave and millimetre-wave power amplifier technology, including both discrete transistors and fully monolithic microwave integrated circuits (MMICs). The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The presentation will consider the key characteristics of these technologies. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are presented. A newly developed high yield power FET process is described and the application of this technology to multi-carrier microwave power amplifiers is discussed, achieving output powers of up to 120 W with 70% efficiency at 2 GHz.

Item Type: Article
Authors :
NameEmailORCID
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 1 September 2003
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:32
Last Modified : 16 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/814255

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