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A new HEMT breakdown model incorporating gate and thermal effects

Albasha, L, Snowden, CM and Pollard, RD (1998) A new HEMT breakdown model incorporating gate and thermal effects VLSI Design, 8 (1-4). pp. 349-353.

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Abstract

This paper presents a comprehensive physical model for the breakdown process in HEMTs. The model is integrated into in a fast quasi-two-dimensional HEMT physical simulator. The work is based on a full study of the complex interactions between the different breakdown mechanisms and the influence of design parameters. The model takes account of tunnelling effects in the region of the gate metallization, and of the thermal effects in the active channel under the gate region.

Item Type: Article
Authors :
NameEmailORCID
Albasha, LUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Pollard, RDUNSPECIFIEDUNSPECIFIED
Date : 1 December 1998
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:32
Last Modified : 16 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/814247

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