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Hot electron model for the large-signal modelling of mm-wave GaAs transferred electron devices

Spooner, H, Howes, MJ and Snowden, CM (1990) Hot electron model for the large-signal modelling of mm-wave GaAs transferred electron devices IEE Colloquium (Digest) (113).

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Abstract

This paper presents a detailed hot-electron physical device model suitable for the large-signal modelling of GaAs transferred electron devices. All results presented are compared with experimental results, essential for the verification and validation of the model especially for this inherently non-linear, circuit-dependent device. The incorporation of the conservation equations has a marked effect on the theoretical behaviour of the device. It is essential if high frequency and power devices are to be modelled accurately since electron relaxation effects play a much bigger role at higher frequencies and in harmonic generation.

Item Type: Article
Authors :
NameEmailORCID
Spooner, HUNSPECIFIEDUNSPECIFIED
Howes, MJUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Date : 1 December 1990
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:32
Last Modified : 16 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/814241

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