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HEMT physical model for CAD

Morton, CG, Snowden, CM and Howes, MJ (1995) HEMT physical model for CAD IEE Colloquium (Digest) (64).

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Abstract

A quasi-two dimensional HEMT model which makes it possible to predict device pinch off at high drain bias is presented. It includes an analytical description of the carrier injection into the buffer/substrate regions of the device. The equivalent circuit, extracted from the S parameter simulation shows no spurious responses and exhibits the correct variation with applied gate and drain bias.

Item Type: Article
Authors :
NameEmailORCID
Morton, CGUNSPECIFIEDUNSPECIFIED
Snowden, CMc.snowden@surrey.ac.ukUNSPECIFIED
Howes, MJUNSPECIFIEDUNSPECIFIED
Date : 1 January 1995
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:32
Last Modified : 16 May 2017 12:32
URI: http://epubs.surrey.ac.uk/id/eprint/814235

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