University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-Dimensional EDX Approach

Carta, Daniela, Salaoru, I, Khiat, A, Regoutz, A, Mitterbauer, C, Harrison, NM and Prodromakis, T (2016) Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-Dimensional EDX Approach ACS Applied Materials and Interfaces, 8 (30). pp. 19605-19611.

[img]
Preview
Text
acsami%2E6b04919.pdf - Version of Record
Available under License : See the attached licence file.

Download (6MB) | Preview
[img]
Preview
PDF (licence)
SRI_deposit_agreement.pdf
Available under License : See the attached licence file.

Download (33kB) | Preview

Abstract

The next generation of nonvolatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multistate memory nanostructure devices. However, progress in their technological development has been inhibited by the lack of a thorough understanding of the underlying switching mechanisms. Here, we employed high-angle annular darkfield scanning transmission electron microscopy (HAADF-STEM) combined with two-dimensional energy dispersive X-ray spectroscopy (2D EDX) to provide a novel, nanoscale view of the mechanisms involved. Our results suggest that the switching mechanism involves redistribution of both Ti and O ions within the active layer combined with an overall loss of oxygen that effectively render conductive filaments. Our study shows evidence of titanium movement in a 10 nm TiO2 thin-film through direct EDX mapping that provides a viable starting point for the improvement of the robustness and lifetime of TiO2-based resistive random access memory (RRAM).

Item Type: Article
Subjects : Chemistry
Authors :
NameEmailORCID
Carta, Danielad.carta@surrey.ac.ukUNSPECIFIED
Salaoru, IUNSPECIFIEDUNSPECIFIED
Khiat, AUNSPECIFIEDUNSPECIFIED
Regoutz, AUNSPECIFIEDUNSPECIFIED
Mitterbauer, CUNSPECIFIEDUNSPECIFIED
Harrison, NMUNSPECIFIEDUNSPECIFIED
Prodromakis, TUNSPECIFIEDUNSPECIFIED
Date : 13 July 2016
Identification Number : 10.1021/acsami.6b04919
Copyright Disclaimer : Copyright © 2016 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Uncontrolled Keywords : resistive memory, titanium dioxide, memristors, energy dispersive X-ray spectroscopy, thin films, resistive switching
Depositing User : Symplectic Elements
Date Deposited : 31 Mar 2017 13:54
Last Modified : 19 Jul 2017 14:14
URI: http://epubs.surrey.ac.uk/id/eprint/813900

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800