Unfolding the band structure of GaAsBi

Maspero, Ross, Sweeney, Stephen and Florescu, Marian (2016) Unfolding the band structure of GaAsBi Journal of Physics: Condensed Matter, 29 (7), 075001.

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Abstract

Typical supercell approaches used to investigate the electronic properties of GaAs(1−x)Bi(x) produce highly accurate, but folded, band structures. Using a highly optimized algorithm, we unfold the band structure to an approximate $E\left(\mathbf{k}\right)$ relation associated with an effective Brillouin zone. The dispersion relations we generate correlate strongly with experimental results, confirming that a regime of band gap energy greater than the spin–orbit-splitting energy is reached at around 10% bismuth fraction. We also demonstrate the effectiveness of the unfolding algorithm throughout the Brillouin zone (BZ), which is key to enabling transition rate calculations, such as Auger recombination rates. Finally, we show the effect of disorder on the effective masses and identify approximate values for the effective mass of the conduction band and valence bands for bismuth concentrations from 0–12%.

Item Type:	Article
Subjects :	Physics
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Maspero, Ross r.maspero@surrey.ac.uk Sweeney, Stephen S.Sweeney@surrey.ac.uk Florescu, Marian m.florescu@surrey.ac.uk
Date :	23 December 2016
Identification Number :	10.1088/1361-648X/aa50d7
Copyright Disclaimer :	© 2016 IOP Publishing Ltd
Depositing User :	Symplectic Elements
Date Deposited :	06 Jan 2017 11:57
Last Modified :	23 Dec 2017 02:08
URI:	http://epubs.surrey.ac.uk/id/eprint/813213

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