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Stability of Silicon carbide particle detector performance at elevated temperatures

Abubakar, YM, Lohstroh, A and Sellin, PJ (2015) Stability of Silicon carbide particle detector performance at elevated temperatures IEEE Transactions on Nuclear Science, 62 (5). pp. 2360-2366.

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Abstract

The alpha spectroscopy performance and electric current stability of 4H-silicon carbide Schottky devices with 50 μm epitaxial layer was examined at temperatures between 300 to 500 K at 50 K intervals. An activation energy of 5.98 ±0.64 meV was extracted from temperature dependent resistivity measurements. The Schottky barrier height decreases from 1.33 eV at 300 K to 1.11 eV at 500 K and the ideality factor increases from 1.17 at 300 K to 1.79 at 500 K. The reverse bias leakage currents stabilizes faster at higher temperatures. The charge collection efficiency is above 90% for temperatures up to 500 K. Pulse height spectra collected for 24 hours at constant voltage and temperature show improvements with time within the first 8 hours and remained stable for the remainder of the acquisition time. The peak width of the alpha spectra reduces significantly with increasing temperature at applied bias voltages below 50 V, which indicates that leakage currents are not the limiting factor in those conditions even at 500 K in our set up. So far, the devices indicate reasonable stability for extended periods of operation and highlight possible applications in harsh radiation media.

Item Type: Article
Subjects : Physics
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Abubakar, YMUNSPECIFIEDUNSPECIFIED
Lohstroh, AUNSPECIFIEDUNSPECIFIED
Sellin, PJUNSPECIFIEDUNSPECIFIED
Date : 8 September 2015
Identification Number : 10.1109/TNS.2015.2475421
Copyright Disclaimer : © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Uncontrolled Keywords : Silicon carbide, Harsh radiation media, Schottky barrier height, Ideality factor, Epitaxial semiconductors, Stability, Noise.
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 12 Aug 2016 09:48
Last Modified : 12 Aug 2016 09:48
URI: http://epubs.surrey.ac.uk/id/eprint/811686

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