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Removal of measurement artifacts present in high-power RF transistor loadpull test-fixtures

Barbieri, T, Aaen, PH and Noori, B (2013) Removal of measurement artifacts present in high-power RF transistor loadpull test-fixtures 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013.

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Abstract

In this paper we investigate the effect of a discontinuity, at the measurement reference plane, on loadpull measurements of high-power RF transistors. The discontinuity is created by transition from the microstrip transformers on the printed-circuit board of the test-fixture to the packaged transistor. Our measurements indicate that the discontinuity does not change the peak performance of a packaged transistor but it can significantly alter the impedances at which this performance occurs. Through a straight-forward electromagnetic simulation we are able to characterize the discontinuity and remove it from measurement. © 2013 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Barbieri, TUNSPECIFIEDUNSPECIFIED
Aaen, PHUNSPECIFIEDUNSPECIFIED
Noori, BUNSPECIFIEDUNSPECIFIED
Date : 16 September 2013
Identification Number : 10.1109/ARFTG.2013.6579050
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 15:54
Last Modified : 31 Oct 2017 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/811296

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