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Modeling and characterization of RF and microwave power fets

Aaen, PH, Plá, JA and Wood, J (2007) Modeling and characterization of RF and microwave power fets UNSPECIFIED. ISBN 9780511541124

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Abstract

© Cambridge University Press 2007 and Cambridge University Press, 2009.This 2007 book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Item Type: Book
Authors :
AuthorsEmailORCID
Aaen, PHUNSPECIFIEDUNSPECIFIED
Plá, JAUNSPECIFIEDUNSPECIFIED
Wood, JUNSPECIFIEDUNSPECIFIED
Date : 1 January 2007
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 15:31
Last Modified : 28 Mar 2017 15:31
URI: http://epubs.surrey.ac.uk/id/eprint/811293

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