Electrically injected GaAsBi Quantum Well Lasers

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K et al, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A (2014) Electrically injected GaAsBi Quantum Well Lasers In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

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Abstract

GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.

Item Type:	Conference or Workshop Item (Conference Paper)
Subjects :	Physics
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A
Date :	1 January 2014
DOI :	10.1109/ISLC.2014.96
Copyright Disclaimer :	© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Contributors :	Contribution Name Email ORCID IEEE COMPUTER SOC,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	07 Jul 2016 09:51
Last Modified :	06 Jul 2019 05:15
URI:	http://epubs.surrey.ac.uk/id/eprint/811047

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