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Optical gain in GaAsBi/GaAs quantum well diode lasers

Marko, IP and Sweeney, SJ Optical gain in GaAsBi/GaAs quantum well diode lasers [Dataset]

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Item Type: Dataset
Principal Investigator :
Principal InvestigatorEmail
Prof. Stephen Sweeney, UNSPECIFIED
Description : Dataset corresponding to paper with the above title. Abstract: Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10-15 cm-1 and a peak modal gain of 24 cm-1, corresponding to a material gain of approximately 1500 cm-1 at a current density of 2 kA cm-2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared.
Dataset Creators :
AuthorsEmailORCID
Marko, IPUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Publication Year of Data : 2016
Creation Dates : 2013-2015
Funder : EPSRC
Identification Number : 10.15126/surreydata.00810996
Grant Title : (1) "Efficient Photonic Devices for Near- and Mid-Infrared Applications" and (2) "Exploring Short Wavelength Limits for High Performance Quantum Cascade Lasers"
Access Statement : Due to confidentiality agreements with research collaborators, supporting data can only be made available to bona fide researchers subject to a non-disclosure agreement.
Copyright License : CC BY*: This licence allows readers to copy, distribute and transmit the Contribution as long as it is attributed back to the author. Readers are permitted to alter, transform or build upon the Contribution, and to use the article for commercial purposes.
Data Access Contact :
Data Access ContactEmail
UNSPECIFIEDresearchdata@surrrey.ac.uk
External Data Location : Internal Data Location
Embargo Date :
31 July 2016
Data Format : txt-data files, origing graphs, images
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDJin S.R., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDBroderick C. A., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDLudewig P., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDVolz K., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDStolz W., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDRorison J.M., UNSPECIFIEDUNSPECIFIED
UNSPECIFIEDO'Reilly E.P., UNSPECIFIEDUNSPECIFIED
Discipline : Physics
Keywords : GaAsBi, laser diode, optical gain, absorption, optical loss, spontaneous emission
Data Collection Method : Automated experimental setups for electrical and optical characterisation, MOVPE growth, laser diode processing and fabrication, computer modelling.
Depositing User : Symplectic Elements
Date Deposited : 14 Jun 2016 08:16
Last Modified : 14 Jun 2016 08:16
URI: http://epubs.surrey.ac.uk/id/eprint/810996

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