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Silicon-Modified Rare-Earth Transitions - a New Route to Near- and Mid-IR Photonics

Lourenco, MD, Hughes, MA, Lai, KT, Sofi, IM, Ludurczak, W, Wong, L, Gwilliam, RM and Homewood, KP (2016) Silicon-Modified Rare-Earth Transitions - a New Route to Near- and Mid-IR Photonics Advanced Functional Materials, 26. pp. 1986-1994.

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Abstract

Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the fi rst observation of direct optical transitions from the silicon band edge to internal f -levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu-implanted silicon devices display a greatly enhanced electroluminescence effi ciency of 8%. Also observed is the fi rst crystal fi eld splitting in Ce luminescence. Mid-IR silicon photodetectors with specifi c detectivities comparable to existing state-of-theart mid-IR detectors are demonstrated.

Item Type: Article
Subjects : subj_Electronic_Engineering
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
AuthorsEmailORCID
Lourenco, MDUNSPECIFIEDUNSPECIFIED
Hughes, MAUNSPECIFIEDUNSPECIFIED
Lai, KTUNSPECIFIEDUNSPECIFIED
Sofi, IMUNSPECIFIEDUNSPECIFIED
Ludurczak, WUNSPECIFIEDUNSPECIFIED
Wong, LUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Date : 9 February 2016
Identification Number : 10.1002/adfm.201504662
Copyright Disclaimer : This is the pre-peer reviewed version of the following article: Lourenco, MD, Hughes, MA, Lai, KT, Sofi, IM, Ludurczak, W, Wong, L, Gwilliam, RM and Homewood, KP (2016) Silicon-Modified Rare-Earth Transitions - a New Route to Near- and Mid-IR Photonics Advanced Functional Materials, 26. pp. 1986-1994, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/adfm.201504662/pdf This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Depositing User : Symplectic Elements
Date Deposited : 12 Apr 2016 14:38
Last Modified : 25 Aug 2016 14:05
URI: http://epubs.surrey.ac.uk/id/eprint/810382

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