University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock

Constantinou, M, Rigas, GP, Castro, FA, Stolojan, V, Hoettges, KF, Hughes, M, Adkins, E, Korgel, BA and Shkunov, M (2016) Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock ACS Nano, 10 (4). pp. 4384-4394.

[img] Text
ACS_Nano_DEP _Paper_Main_text_&_SI_(2).pdf - Author's Original
Restricted to Repository staff only until 22 March 2017.
Available under License : See the attached licence file.

Download (6MB)
[img]
Preview
Text (licence)
SRI_deposit_agreement.pdf
Available under License : See the attached licence file.

Download (33kB) | Preview
[img] Text (deleted)
ACS_Nano_DEP _Paper_Main_text_&_SI.pdf - Author's Original
Restricted to Repository staff only
Available under License : See the attached licence file.

Download (6MB)

Abstract

Semiconducting nanowires (NWs) are becoming essential nano-building blocks for advanced devices from sensors to energy harvesters, however their full technology penetration requires large scale materials synthesis together with efficient NW assembly methods. We demonstrate a scalable one-step solution process for the direct selection, collection and ordered assembly of silicon NWs with desired electrical properties from a poly-disperse collection of NWs obtained from a Supercritical Fluid-Liquid-Solid growth process. Dielectrophoresis (DEP) combined with impedance spectroscopy provides a selection mechanism at high signal frequencies (>500 kHz) to isolate NWs with the highest conductivity and lowest defect density. The technique allows simultaneous control of five key parameters in NW assembly: selection of electrical properties, control of NW length, placement in pre-defined electrode areas, highly preferential orientation along the device channel and control of NWs deposition density from few to hundreds per device. Direct correlation between DEP signal frequency and deposited NWs conductivity is directly confirmed by field-effect transistor and conducting-AFM data. Fabricated NW transistor devices demonstrate excellent performance with up to 1.6 mA current, 106-107 on/off ratio and hole-mobility of 50 cm2 V-1 s-1.

Item Type: Article
Subjects : Electronic Engineering
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
AuthorsEmailORCID
Constantinou, MUNSPECIFIEDUNSPECIFIED
Rigas, GPUNSPECIFIEDUNSPECIFIED
Castro, FAUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Hoettges, KFUNSPECIFIEDUNSPECIFIED
Hughes, MUNSPECIFIEDUNSPECIFIED
Adkins, EUNSPECIFIEDUNSPECIFIED
Korgel, BAUNSPECIFIEDUNSPECIFIED
Shkunov, MUNSPECIFIEDUNSPECIFIED
Date : 22 March 2016
Funders : EPSRC
Identification Number : 10.1021/acsnano.6b00005
Grant Title : From nanowires to printed electronics
Copyright Disclaimer : Copyright © 2016 American Chemical Society
Depositing User : Symplectic Elements
Date Deposited : 21 Apr 2016 09:34
Last Modified : 16 Nov 2016 13:03
URI: http://epubs.surrey.ac.uk/id/eprint/810271

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800