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Single-crystalline ZnO sheet Source-Gated Transistors

Dahiya, AS, Opoku, C, Sporea, RA, Sarvankumar, B, Poulin-Vittrant, G, Cayrel, F, Camara, N and Alquier, D (2016) Single-crystalline ZnO sheet Source-Gated Transistors Scientific Reports, 6, 19232.

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Abstract

Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDSSAT) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.

Item Type: Article
Subjects : ATI
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Dahiya, ASUNSPECIFIEDUNSPECIFIED
Opoku, CUNSPECIFIEDUNSPECIFIED
Sporea, RAUNSPECIFIEDUNSPECIFIED
Sarvankumar, BUNSPECIFIEDUNSPECIFIED
Poulin-Vittrant, GUNSPECIFIEDUNSPECIFIED
Cayrel, FUNSPECIFIEDUNSPECIFIED
Camara, NUNSPECIFIEDUNSPECIFIED
Alquier, DUNSPECIFIEDUNSPECIFIED
Date : 13 January 2016
Identification Number : 10.1038/srep19232
Copyright Disclaimer : This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 29 Jan 2016 09:19
Last Modified : 13 Apr 2016 12:15
URI: http://epubs.surrey.ac.uk/id/eprint/809775

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