Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

Secchi, M, Demenev, E, Colaux, JL, Giubertoni, D, Dell'Anna, R, Iacob, E, Gwilliam, M, Jeynes, C and Bersani, M (2015) Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy APPLIED SURFACE SCIENCE, 356. pp. 422-428.

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Item Type:	Article
Authors :	Name Email ORCID Secchi, M Demenev, E Colaux, JL Giubertoni, D Dell'Anna, R Iacob, E Gwilliam, M Jeynes, C Bersani, M
Date :	30 November 2015
Identification Number :	10.1016/j.apsusc.2015.08.083
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, SIMS protocol, Ge1-xSnx, Nanotopography, Ripple, ION-BOMBARDMENT, SPECTROMETRY, TOPOGRAPHY, ROUGHNESS, GERMANIUM, SURFACES, CS+
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 10:57
Last Modified :	31 Oct 2017 17:59
URI:	http://epubs.surrey.ac.uk/id/eprint/809686

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