Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

Simmons, RA, Jin, SR, Sweeney, SJ and Clowes, SK (2015) Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth APPLIED PHYSICS LETTERS, 107 (14), ARTN 1.

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Abstract

This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Simmons, RA Jin, SR Sweeney, SJ Clowes, SK
Date :	5 October 2015
DOI :	10.1063/1.4932122
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, 2-DIMENSIONAL ELECTRON-GAS, CONDUCTION SUBBANDS, INVERSION ASYMMETRY, HETEROSTRUCTURES, GROWTH
Related URLs :	Author
Additional Information :	Copyright 2015 American Institute of Physics
Depositing User :	Symplectic Elements
Date Deposited :	18 Dec 2015 19:15
Last Modified :	31 Oct 2017 17:57
URI:	http://epubs.surrey.ac.uk/id/eprint/809573

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