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Efficiency limiting processes and optimisation of silicon compatible lasers for optoelectronic integration and optical interconnects.

Read, Graham W. (2015) Efficiency limiting processes and optimisation of silicon compatible lasers for optoelectronic integration and optical interconnects. Doctoral thesis, University of Surrey.

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Abstract

Optoelectronic integration on silicon is an area of increasing interest for both physicists and the microelectronics industry. Due to the limitations of silicon as an optical gain medium, the integration of III-Vs with silicon microelectronics has become a prominent area of research. However, the fundamental physical differences between these materials has caused such lasers to be strongly limited by non-radiative recombination. Studies of these mechanisms are therefore essential for solutions to be developed that will allow commercially viable III-V/Si lasers to be fabricated. This thesis presents such studies for three of the four leading approaches to producing III-V/Si lasers (quantum dots on silicon are not studied), with conclusions on the relative performance of each presented in the �final chapter. AlGaInAs/InP laser active regions wafer bonded onto pre-processed silicon-on-insulator waveguides have exhibited strong performance, with electrical injection lasing demonstrated at room temperature. However, large and temperature sensitive threshold current densities of �3.4 � 6.16 kAcm

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
AuthorsEmailORCID
Read, Graham W.gr_24@hotmail.comUNSPECIFIED
Date : 15 December 2015
Funders : Engineering and Physical Sciences Research Council (EPSRC)
Contributors :
ContributionNameEmailORCID
Thesis supervisorSweeney, Stephen J.S.Sweeney@surrey.ac.ukUNSPECIFIED
Depositing User : Graham Read
Date Deposited : 12 Jan 2016 09:00
Last Modified : 12 Jan 2016 09:00
URI: http://epubs.surrey.ac.uk/id/eprint/809416

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