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Self-Heating Effects In Polysilicon Source Gated Transistors

Sporea, RA, Burridge, T and Silva, SRP (2015) Self-Heating Effects In Polysilicon Source Gated Transistors SCIENTIFIC REPORTS, 5, ARTN 1.

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Item Type: Article
Authors :
AuthorsEmailORCID
Sporea, RAUNSPECIFIEDUNSPECIFIED
Burridge, TUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 9 September 2015
Identification Number : https://doi.org/10.1038/srep14058
Uncontrolled Keywords : Science & Technology, Multidisciplinary Sciences, Science & Technology - Other Topics, THIN-FILM TRANSISTORS, FIELD-EFFECT TRANSISTORS, HYDROGENATED AMORPHOUS-SILICON, HIGH-PERFORMANCE, TEMPERATURE-DEPENDENCE, ORGANIC TRANSISTOR, N-TYPE, GAS SENSORS, MOBILITY, SEMICONDUCTORS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 15:53
Last Modified : 28 Mar 2017 15:53
URI: http://epubs.surrey.ac.uk/id/eprint/808905

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