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Characterization of the metal-semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

Bell, SJ, Baker, MA, Duarte, DD, Schneider, A, Seller, P, Sellin, PJ, Veale, MC and Wilson, MD (2015) Characterization of the metal-semiconductor interface of gold contacts on CdZnTe formed by electroless deposition JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (27), ARTN 2.

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Abstract

Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These applications have demanding energy and spatial resolution requirements that are not always met by the metal contacts deposited on the CdZnTe. To improve the contacts, the interface formed between metal and semiconductor during contact deposition must be better understood. Gold has a work function closely matching that of high resistivity CdZnTe and is a popular choice of contact metal. Gold contacts are often formed by electroless deposition however this forms a complex interface. The prior CdZnTe surface preparation, such as mechanical or chemo-mechanical polishing, and electroless deposition parameters, such as gold chloride solution temperature, play important roles in the formation of the interface and are the subject of the presented work. Techniques such as focused ion beam (FIB) cross section imaging, transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and current − voltage (I–V) analysis have been used to characterize the interface. It has been found that the electroless reaction depends on the surface preparation and for chemo-mechanically polished (1 1 1) CdZnTe, it also depends on the A/B face identity. Where the deposition occurred at elevated temperature, the deposited contacts were found to produce a greater leakage current and suffered from increased subsurface voiding due to the formation of cadmium chloride.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Mechanical Engineering Sciences
Authors :
AuthorsEmailORCID
Bell, SJUNSPECIFIEDUNSPECIFIED
Baker, MAUNSPECIFIEDUNSPECIFIED
Duarte, DDUNSPECIFIEDUNSPECIFIED
Schneider, AUNSPECIFIEDUNSPECIFIED
Seller, PUNSPECIFIEDUNSPECIFIED
Sellin, PJUNSPECIFIEDUNSPECIFIED
Veale, MCUNSPECIFIEDUNSPECIFIED
Wilson, MDUNSPECIFIEDUNSPECIFIED
Date : 15 July 2015
Identification Number : 10.1088/0022-3727/48/27/275304
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, CZT, radiation detection, XPS, PCA, FIB, I-V, CADMIUM ZINC TELLURIDE, ELECTRICAL-PROPERTIES, RADIATION DETECTORS, SURFACE PREPARATION, RAY SPECTROMETER, CRYSTAL-SURFACES, CDTE, AU, RESISTIVITY, PERFORMANCE
Related URLs :
Additional Information : © 2015 IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI
Depositing User : Symplectic Elements
Date Deposited : 13 Oct 2015 18:08
Last Modified : 13 Oct 2015 18:08
URI: http://epubs.surrey.ac.uk/id/eprint/808755

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