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Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current

Adams, AR, Marko, IP, Mukherjee, J, Stolojan, V, Sweeney, S, Gocalinska, A, Pelucchi, E, Thomas, K and Corbett, B (2015) Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 150080.

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Abstract

This paper proposes and demonstrates a new multiquantum well (MQW) laser structure with a temperature-insensitive threshold current and output power. Normally, the mechanisms that cause the threshold current (Ith) of semiconductor lasers to increase with increasing temperature T (thermal broadening of the gain spectrum, thermally activated carrier escape, Auger recombination, and intervalence band absorption) act together to cause Ith to increase as T increases. However, in the design presented here, carriers thermally released from some of the QWs are fed to the other QWs so that these mechanisms compensate rather than augment one another. The idea is in principle applicable to a range of materials systems, structures, and operating wavelengths. We have demonstrated the effect for the first time in 1.5 μm GaInAsP/InP Fabry-Perot cavity edge-emitting lasers. The results showed that it is possible to keep the threshold current constant over a temperature range of about 100 K and that the absolute temperature over which the plateau occurred could be adjusted easily by redesigning the quantum wells and the barriers between them. TEM studies of the structures combined with measurements of the electroluminescent intensities from the wells are presented and explain well the observed effects.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Adams, ARUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Mukherjee, JUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Sweeney, SUNSPECIFIEDUNSPECIFIED
Gocalinska, AUNSPECIFIEDUNSPECIFIED
Pelucchi, EUNSPECIFIEDUNSPECIFIED
Thomas, KUNSPECIFIEDUNSPECIFIED
Corbett, BUNSPECIFIEDUNSPECIFIED
Date : 16 March 2015
Identification Number : 10.1109/JSTQE.2015.2413403
Uncontrolled Keywords : Diode lasers, quantum well, temperature depen- dence, thermal stability
Related URLs :
Additional Information : (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 20 Oct 2015 08:29
Last Modified : 20 Oct 2015 08:29
URI: http://epubs.surrey.ac.uk/id/eprint/808646

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