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Physical Properties and Characteristics of III-V Lasers on Silicon

Marko, Igor, Read, GW, Hossain, N and Sweeney, Stephen (2015) Physical Properties and Characteristics of III-V Lasers on Silicon IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 1502208.

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Abstract

The development of laser technology based on silicon continues to be of key importance for the advancement of electronic-photonic integration offering the potential for high data rates and reduced energy consumption. Progress was initially hindered due to the inherent indirect band gap of silicon. However, there has been considerable progress in developing ways of incorporating high gain III-V based direct band gap materials onto silicon, bringing about the advantages of both materials. In this paper, we introduce the need for lasers on silicon and review some of the main approaches for the integration of III-V active regions, including direct epitaxial growth, hybrid integration, defect blocking layers and quantum dots. We then discuss the roles of different carrier recombination processes on the performance of devices formed using both wafer fusion and direct epitaxial approaches.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
NameEmailORCID
Marko, IgorI.Marko@surrey.ac.ukUNSPECIFIED
Read, GWUNSPECIFIEDUNSPECIFIED
Hossain, NUNSPECIFIEDUNSPECIFIED
Sweeney, StephenS.Sweeney@surrey.ac.ukUNSPECIFIED
Date : 21 April 2015
Identification Number : 10.1109/JSTQE.2015.2424923
Copyright Disclaimer : © 2015 IEEE.
Uncontrolled Keywords : Carrier recombination processes, efficiency, pho- tonic integration, silicon photonics, temperature sensitivity, III-V epitaxy
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 27 Jul 2017 09:58
Last Modified : 31 Oct 2017 17:41
URI: http://epubs.surrey.ac.uk/id/eprint/808645

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