Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.

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Item Type:	Article
Authors :	Authors Email ORCID Marko, IP UNSPECIFIED UNSPECIFIED Jin, SR UNSPECIFIED UNSPECIFIED Hild, K UNSPECIFIED UNSPECIFIED Batool, Z UNSPECIFIED UNSPECIFIED Bushell, ZL UNSPECIFIED UNSPECIFIED Ludewig, P UNSPECIFIED UNSPECIFIED Stolz, W UNSPECIFIED UNSPECIFIED Volz, K UNSPECIFIED UNSPECIFIED Butkute, R UNSPECIFIED UNSPECIFIED Pacebutas, V UNSPECIFIED UNSPECIFIED Geizutis, A UNSPECIFIED UNSPECIFIED Krotkus, A UNSPECIFIED UNSPECIFIED Sweeney, SJ UNSPECIFIED UNSPECIFIED
Date :	1 September 2015
Identification Number :	https://doi.org/10.1088/0268-1242/30/9/094008
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, bismides, GaAsBi, laser diodes, recombination processes, temperature performance, epitaxy growth, HIGH HYDROSTATIC-PRESSURE, RECOMBINATION, DIODES
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 10:55
Last Modified :	28 Mar 2017 10:55
URI:	http://epubs.surrey.ac.uk/id/eprint/808391

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