Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
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Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V , Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.
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Item Type: | Article |
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Divisions : | Surrey research (other units) |
Authors : | Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ |
Date : | 1 September 2015 |
DOI : | 10.1088/0268-1242/30/9/094008 |
Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, bismides, GaAsBi, laser diodes, recombination processes, temperature performance, epitaxy growth, HIGH HYDROSTATIC-PRESSURE, RECOMBINATION, DIODES |
Related URLs : | |
Depositing User : | Symplectic Elements |
Date Deposited : | 28 Mar 2017 10:55 |
Last Modified : | 24 Jan 2020 12:37 |
URI: | http://epubs.surrey.ac.uk/id/eprint/808391 |
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