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Next Generation Device Grade Silicon-Germanium on Insulator

Littlejohns, CG, Nedeljkovic, M, Mallinson, CF, Watts, JF, Mashanovich, GZ, Reed, GT and Gardes, FY (2015) Next Generation Device Grade Silicon-Germanium on Insulator Scientific Reports, 5, ARTN 8. pp. 1-6.

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Abstract

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Mechanical Engineering Sciences
Authors :
AuthorsEmailORCID
Littlejohns, CGUNSPECIFIEDUNSPECIFIED
Nedeljkovic, MUNSPECIFIEDUNSPECIFIED
Mallinson, CFUNSPECIFIEDUNSPECIFIED
Watts, JFUNSPECIFIEDUNSPECIFIED
Mashanovich, GZUNSPECIFIEDUNSPECIFIED
Reed, GTUNSPECIFIEDUNSPECIFIED
Gardes, FYUNSPECIFIEDUNSPECIFIED
Date : 6 February 2015
Identification Number : 10.1038/srep08288
Uncontrolled Keywords : Science & Technology, Multidisciplinary Sciences, Science & Technology - Other Topics, GE-ON-INSULATOR, OPTICAL INTERCONNECTS, EPITAXIAL-GROWTH, MODULATOR, FABRICATION, SI
Related URLs :
Additional Information : This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Depositing User : Symplectic Elements
Date Deposited : 08 Sep 2015 14:59
Last Modified : 08 Sep 2015 14:59
URI: http://epubs.surrey.ac.uk/id/eprint/808221

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