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Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

Melios, C, Panchal, V, Giusca, CE, Strupinski, W, Silva, SRP and Kazakova, O (2015) Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties SCIENTIFIC REPORTS, 5, ARTN 1.

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Abstract

We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accompanied by a more than three-fold increase in carrier mobility, up to μh ∼ 4540 cm2V-1s-1. On a local scale, Kelvin probe force microscopy provides a complete and detailed map of the surface potential distribution of graphene domains of different thicknesses. Rearrangement of graphene layers upon intercalation to (n+1)LG, where n is the number of graphene layers (LG) before intercalation, is demonstrated. This is accompanied by a significant increase in the work function of the graphene after the H2-intercalation, which confirms the change of majority carriers from electrons to holes. Raman spectroscopy and mapping corroborate surface potential studies.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Melios, CUNSPECIFIEDUNSPECIFIED
Panchal, VUNSPECIFIEDUNSPECIFIED
Giusca, CEUNSPECIFIEDUNSPECIFIED
Strupinski, WUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Kazakova, OUNSPECIFIEDUNSPECIFIED
Date : 1 June 2015
Identification Number : 10.1038/srep10505
Uncontrolled Keywords : Science & Technology, Multidisciplinary Sciences, Science & Technology - Other Topics, PROBE FORCE MICROSCOPY, EPITAXIAL GRAPHENE
Related URLs :
Additional Information : CC-BY. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Depositing User : Symplectic Elements
Date Deposited : 07 Aug 2015 08:17
Last Modified : 07 Aug 2015 08:17
URI: http://epubs.surrey.ac.uk/id/eprint/808062

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