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Temperature dependence of the current in Schottky-barrier source-gated transistors

Sporea, RA, Overy, M, Shannon, JM and Silva, SRP (2015) Temperature dependence of the current in Schottky-barrier source-gated transistors JOURNAL OF APPLIED PHYSICS, 117 (18), ARTN 1.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Sporea, RAUNSPECIFIEDUNSPECIFIED
Overy, MUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 14 May 2015
Identification Number : 10.1063/1.4921114
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, THIN-FILM TRANSISTORS, HYDROGENATED AMORPHOUS-SILICON, GAIN
Related URLs :
Additional Information : Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics The following article appeared in Journal of Applied Physics, 117, 184502 (2015)and may be found at http://dx.doi.org/10.1063/1.4921114
Depositing User : Symplectic Elements
Date Deposited : 19 Jun 2015 10:54
Last Modified : 20 Jun 2015 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/807863

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