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Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

Prins, AD, Lewis, MK, Bushell, ZL, Sweeney, SJ, Liu, S and Zhang, Y-H (2015) Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors APPLIED PHYSICS LETTERS, 106 (17), ARTN 1.

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Abstract

We report pressure-dependent photoluminescence (PL) experiments under hydrostatic pressures up to 2.16 GPa on a mid-wave infrared InAs/InAs0.86Sb0.14 type-II superlattice (T2SL) structure at different pump laser excitation powers and sample temperatures. The pressure coefficient of the T2SL transition was found to be 93 ± 2 meV·GPa-1. The integrated PL intensity increases with pressure up to 1.9 GPa then quenches rapidly indicating a pressure induced level crossing with the conduction band states at ∼2 GPa. Analysis of the PL intensity as a function of excitation power at 0, 0.42, 1.87, and 2.16 GPa shows a clear change in the dominant photo-generated carrier recombination mechanism from radiative to defect related. From these data, evidence for a defect level situated at 0.18 ± 0.01 eV above the conduction band edge of InAs at ambient pressure is presented. This assumes a pressure-dependent energy shift of -11 meV·GPa-1 for the valence band edge and that the defect level is insensitive to pressure, both of which are supported by an Arrhenius activation energy analysis.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Prins, ADUNSPECIFIEDUNSPECIFIED
Lewis, MKUNSPECIFIEDUNSPECIFIED
Bushell, ZLUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Liu, SUNSPECIFIEDUNSPECIFIED
Zhang, Y-HUNSPECIFIEDUNSPECIFIED
Date : 27 April 2015
Identification Number : 10.1063/1.4919549
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, SEMICONDUCTORS, SPECTRA, DEPENDENCE, METHANOL, ETHANOL, LASERS, LIQUID, GAAS
Related URLs :
Additional Information : Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS, 106 (17) and may be found at http://dx.doi.org/10.1063/1.4919549
Depositing User : Symplectic Elements
Date Deposited : 17 Jun 2015 11:06
Last Modified : 17 Jun 2015 11:06
URI: http://epubs.surrey.ac.uk/id/eprint/807788

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