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Temperature effects in complementary inverters made with polysilicon source-gated transistors

Sporea, RA, Shannon, JM, Silva, SRP, Trainor, M and Young, N (2015) Temperature effects in complementary inverters made with polysilicon source-gated transistors IEEE Transactions on Electron Devices, 62 (5). pp. 1498-1503.

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Abstract

Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Sporea, RAUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Trainor, MUNSPECIFIEDUNSPECIFIED
Young, NUNSPECIFIEDUNSPECIFIED
Date : 1 May 2015
Identification Number : 10.1109/TED.2015.2412452
Additional Information : Copyright 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 17 Jun 2015 11:38
Last Modified : 17 Jun 2015 11:38
URI: http://epubs.surrey.ac.uk/id/eprint/807784

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