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Physical properties and characteristics of III-V lasers on silicon

Marko, Igor (2015) Physical properties and characteristics of III-V lasers on silicon [Dataset]

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Item Type: Dataset
Divisions : Faculty of Engineering and Physical Sciences > Physics
Principal Investigator :
Principal InvestigatorEmail
Sweeney, Stephen, JUNSPECIFIED
Description : The development of laser technology based on silicon continues to be of key importance for the advancement of electronic-photonic integration offering the potential for high data rates and reduced energy consumption. Progress was initially hindered due to the inherent indirect band gap of silicon. However, there has been considerable progress in developing ways of incorporating high gain III-V based direct band gap materials onto silicon, bringing about the advantages of both materials. In this paper we introduce the need for lasers on silicon and review some of the main approaches for the integration of III-V active regions, including direct epitaxial growth, hybrid integration, defect blocking layers and quantum dots. We then discuss the roles of different carrier recombination processes on the performance of devices formed using both wafer fusion and direct epitaxial approaches.
Publication Year of Data : 2015
Publication Date of Paper : 2015
Creation Dates : 2010
Funder : EPSRC
DOI : 10.15126/surreydata.00807592
Grant Title : Efficient Photonic Devices for Near- and Mid-Infrared Applications
Access Statement : Due to confidentiality agreements with research collaborators, supporting data can only be made available to bona fide researchers subject to a non-disclosure agreement.
Data Access Contact :
Data Access ContactEmail
External Data Location : Internal Location
Data Format : txt-data files, origing graphs, images
Discipline : Physics
Keywords : silicon photonics, temperature sensitivity, photonic integration, III-V epitaxy, carrier recombination processes, efficiency
Depositing User : Symplectic Elements
Date Deposited : 05 May 2015 11:09
Last Modified : 06 Jul 2019 05:14

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